Ballistic Electron Emission Microscopy/Spectroscopy on Au/Titanylphthalocyanine/GaAs Heterostructures
نویسندگان
چکیده
In this article Au/titanylphthalocyanine/GaAs diodes incorporating ultra smooth thin films of the archetypal organic semiconductor titanylphthalocyanine (TiOPc) were investigated by Ballistic Electron Emission Microscopy/Spectroscopy (BEEM/S). Analyzing the BEEM spectra, we find that the TiOPc increases the BEEM threshold voltage compared to reference Au/GaAs diodes. From BEEM images taken we conclude that our molecular beam epitaxial (MBE) grown samples show very homogeneous transmission, compared to wet chemically manufactured organic films. The barrier height measured on the AuTiOPc-GaAs is Vb ~ 1.2eV, which is in good agreement with the data found in reference [1]. The results indicate that TiOPc functions as a ptype semiconductor, which is plausible since the measurements were carried out in air [2].
منابع مشابه
Au/n-Si(100) contact homogeneity studied by direct and reverse ballistic electron emission microscopy and spectroscopy
The Au/n-Si(100) contact has been studied using reverse ballistic electron emission microscopy and spectroscopy. Two types of localised collector currents have been observed; one, positive corresponding to electron injection into Si, and the other, negative, associated with hole injection into the semiconductor. The comparative trial of BEEM and reverse BEEM images from the same area shows this...
متن کاملMapping of AlxGa12xAs band edges by ballistic electron emission spectroscopy
We have employed ballistic electron emission microscopy ~BEEM! to study the energy positions in the conduction band of AlxGa12xAs. Epilayers of undoped AlxGa12xAs were grown by molecular beam epitaxy on conductive GaAs substrates. The Al composition x took on values of 0, 0.11, 0.19, 0.25, 0.50, 0.80 and 1 so that the material was examined in both the direct and indirect band gap regime. The Al...
متن کاملDirect imaging of single Au atoms within GaAs nanowires.
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the electron mean free path and degrades their electronic properties. Aberration-corrected scanning transmission electron microscopy (STEM) is now capable of directly imaging single Au atoms within the dense matrix of a GaAs crystal, by slightly tilting the GaAs lattice planes with respect to the incide...
متن کاملProbing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study
A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding InAs/GaAs quantum dots QDs is studied. Using minorityor majority-carrier injection, ballistic electron emission spectroscopy and its related hot-carrier sca...
متن کاملEffect of Electron Scattering on Second Derivative Ballistic Electron Emission Spectroscopy in AuyGaAsyAlGaAs Heterostructures
We present a quantitative study of the second voltage derivative (SD) of ballistic electron emission spectra of AuyGaAsyAlGaAs heterostructures to probe the effect of electron scattering on these spectra. Our analysis of the SD spectra shows that strong electron scattering occurs at the nonepitaxial AuyGaAs interface, leading to an experimentally observed redistribution of current among the ele...
متن کامل